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| GBPC35005/W-GBPC3510/W Vishay Lite-On Power Semiconductor 35A Glass Passivated Bridge Rectifier Features D D D D D D Glass passivated die construction Diffused junction Low reverse leakage current Low power loss, high efficiency Surge overload rating to 400A peak Electrically isolated metal base for maximum heat dissipation GBPC - W 14 452 GBPC D Case to terminal isolation voltage 2500V D UL listed under recognized component index , file number E95060 Absolute Maximum Ratings Tj = 25_C Parameter Repetitive peak reverse voltage g =Working peak reverse voltage DC Blocking lt =DC Bl ki voltage Test Conditions Type GBPC35005/W GBPC3501/W GBPC3501/W GBPC3501/W GBPC3501/W GBPC3501/W GBPC3501/W Symbol VRRM =VRWM V =VR Value 50 100 200 400 600 800 1000 400 35 -65...+150 Unit V V V V V V V A A C Peak forward surge current Average forward current TC=50C Junction and storage temperature range IFSM IFAV Tj=Tstg Electrical Characteristics Tj = 25_C Parameter Forward voltage Reverse current I2t Rating for fusing Diode capacitance Thermal resistance junction to case Test Conditions IF=17.5A TC=25C TC=125C VR=4V, f=1MHz mounted on heatsink Type Symbol VF IR IR I2t CD RthJC Min Typ Max 1.1 5 500 660 Unit V mA mA A2s pF K/W 300 3.0 Rev. A2, 24-Jun-98 1 (4) GBPC35005/W-GBPC3510/W Vishay Lite-On Power Semiconductor Characteristics (Tj = 25_C unless otherwise specified) IFAV - Average Forward Current ( A ) 40 C D - Diode Capacitance ( pF ) Mounted on a 220 x 220 x 50 mm AL plate heatsink 1000 Tj = 25C f = 1 MHz 30 20 100 10 Resistive or inductive load 0 15680 10 100 125 150 15683 0 25 50 75 0.1 1.0 10 100 Tamb - Ambient Temperature ( C ) VR - Reverse Voltage ( V ) Figure 1. Max. Average Forward Current vs. Ambient Temperature 100 Figure 4. Typ. Diode Capacitance vs. Reverse Voltage 100 IR - Reverse Current ( m A ) Tj = 125C Tj = 130C IF - Forward Current ( A ) 10 10 50V - 400V 600V - 1000V 1.0 1.0 0.1 Tj = 25C IF Pulse Width = 300 s 0.1 Tj = 25C 0.01 15681 0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 VF - Forward Voltage ( V ) 15684 0.01 0 20 40 60 80 100 120 140 Percent of Rated Peak Reverse Voltage (%) Figure 2. Typ. Forward Current vs. Forward Voltage IFSM - Peak Forward Surge Current ( A ) 400 Figure 5. Typ. Reverse Current vs. Percent of Rated Peak Reverse Voltage Tj = 150C Single Half Sine-Wave (JEDEC Method) 300 200 100 0 1 10 Number of Cycles at 60 Hz 100 15682 Figure 3. Max. Peak Forward Surge Current vs. Number of Cycles 2 (4) Rev. A2, 24-Jun-98 GBPC35005/W-GBPC3510/W Vishay Lite-On Power Semiconductor Dimensions in mm 14477 Case: molded plastic with heatsink internally mounted in the bridge encapsulation Polarity: as marked on case Approx. weight: GBPC 18 grams, GBPC-W 14.5 grams Mounting: through hole for #10 screw Mounting torque: 8.0 Inch-pounds maximum Mounting position: any Marking: type number Rev. A2, 24-Jun-98 3 (4) GBPC35005/W-GBPC3510/W Vishay Lite-On Power Semiconductor Ozone Depleting Substances Policy Statement It is the policy of Vishay Semiconductor GmbH to 1. Meet all present and future national and international statutory requirements. 2. Regularly and continuously improve the performance of our products, processes, distribution and operating systems with respect to their impact on the health and safety of our employees and the public, as well as their impact on the environment. It is particular concern to control or eliminate releases of those substances into the atmosphere which are known as ozone depleting substances ( ODSs ). The Montreal Protocol ( 1987 ) and its London Amendments ( 1990 ) intend to severely restrict the use of ODSs and forbid their use within the next ten years. Various national and international initiatives are pressing for an earlier ban on these substances. Vishay Semiconductor GmbH has been able to use its policy of continuous improvements to eliminate the use of ODSs listed in the following documents. 1. Annex A, B and list of transitional substances of the Montreal Protocol and the London Amendments respectively 2 . Class I and II ozone depleting substances in the Clean Air Act Amendments of 1990 by the Environmental Protection Agency ( EPA ) in the USA 3. Council Decision 88/540/EEC and 91/690/EEC Annex A, B and C ( transitional substances ) respectively. Vishay Semiconductor GmbH can certify that our semiconductors are not manufactured with ozone depleting substances and do not contain such substances. We reserve the right to make changes to improve technical design and may do so without further notice. Parameters can vary in different applications. All operating parameters must be validated for each customer application by the customer. Should the buyer use Vishay-Telefunken products for any unintended or unauthorized application, the buyer shall indemnify Vishay-Telefunken against all claims, costs, damages, and expenses, arising out of, directly or indirectly, any claim of personal damage, injury or death associated with such unintended or unauthorized use. Vishay Semiconductor GmbH, P.O.B. 3535, D-74025 Heilbronn, Germany Telephone: 49 ( 0 ) 7131 67 2831, Fax number: 49 ( 0 ) 7131 67 2423 4 (4) Rev. A2, 24-Jun-98 |
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